Samsung
三星的pure nand flash〔就是不带其他模块只是nand flash存储芯片〕的命名规那么如下：1. Memory (K)2. NAND Flash : 93. Small Classification(SLC : Single Level Cell, MLC : Multi Level Cell,SM : Smart Media, S/B : Small Block)1 : SLC 1 Chip XD Card2 : SLC 2 Chip XD Card4 : SLC 4 Chip XD CardA : SLC + Muxed I/ F ChipB : Muxed I/ F ChipD : SLC Dual SME : SLC DUAL (S/ B)F : SLC NormalG : MLC NormalH : MLC QDPJ : Non-Muxed OneNandK : SLC Die StackL : MLC DDPM : MLC DSPN : SLC DSPQ : 4CHIP SMR : SLC 4DIE STACK (S/ B)S : SLC Single SMT : SLC SINGLE (S/ B)U : 2 STACK MSPV : 4 STACK MSPW : SLC 4 Die Stack4~5. Density〔注：实际单位应该是bit，而不是Byte〕12 : 512M16 : 16M28 : 128M32 : 32M40 : 4M56 : 256M64 : 64M80 : 8M1G : 1G2G : 2G4G : 4G8G : 8GAG : 16GBG : 32GCG : 64GDG : 128G00 : NONE6~7. Organization00: NONE08: x816: x168. VccA : 1.65V~3.6VB : 2.7V (2.5V~2.9V)C : 5.0V (4.5V~5.5V)D : 2.65V (2.4V ~ 2.9V)E : 2.3V~3.6VR : 1.8V (1.65V~1.95V)Q : 1.8V (1.7V ~ 1.95V)T : 2.4V~3.0VU : 2.7V~3.6VV : 3.3V (3.0V~3.6V)W : 2.7V~5.5V, 3.0V~5.5V0 : NONE9. Mode0 : Normal1 : Dual nCE & Dual R/ nB4 : Quad nCE & Single R/ nB5 : Quad nCE & Quad R/ nB9 : 1st block OTPA : Mask Option 1L : Low grade10. GenerationM : 1st GenerationA : 2nd GenerationB : 3rd GenerationC : 4th GenerationD : 5th Generation11. "─"12. PackageA : COBB : TBGAC : CHIP BIZD : 63-TBGAE : TSOP1 (Lead-Free, 1217)F : WSOP (Lead-Free) G : FBGAH : TBGA (Lead-Free)I : ULGA (Lead-Free)J : FBGA (Lead-Free)K : TSOP1 (1217)L : LGAM : TLGAN : TLGA2P : TSOP1 (Lead-Free)Q : TSOP2 (Lead-Free)R : TSOP2-RS : SMART MEDIAT : TSOP2U : COB (MMC)V : WSOPW : WAFERY : TSOP113. TempC : CommercialI : IndustrialS : SmartMediaB : SmartMedia BLUE0 : NONE (Containing Wafer, CHIP, BIZ, Exceptionhandling code)3 : Wafer Level 314. Bad BlockA : Apple Bad BlockB : Include Bad BlockD : Daisychain SampleK : Sandisk BinL : 1~5 Bad BlockN : ini. 0 blk, add. 10 blkS : All Good Block0 : NONE (Containing Wafer, CHIP, BIZ, Exceptionhandling code)15. NAND-Reserved0 : Reserved16. Packing Type- Common to all products, except of Mask ROM- Divided into TAPE & REEL(In Mask ROM, divided into TRAY, AMMO Packing Separately).rtcscls-1-r_0 { font-size: 18px; }.rtcscls-1-r_1 { font-size: 18px;font-weight: 400; }.rtcscls-1-r_2 { font-size: 18px;font-weight: 400; }.rtcscls-1-s_p_1 { text-align: justify; }.rtcscls-1-s_p_14_rId_a5 { text-align: left; }.rtcscls-1-s_p_17_rId_a6 { border-bottom: 1px solid #000000;text-align: center; }.rtcscls-1-s_p_22_rId_a8 { text-align: left; }.rtcscls-1-s_p_4_rId_a { text-align: justify; }.rtcscls-1-s_r_0 { }.rtcscls-1-s_r_10_rId_a3 { text-decoration: underline; }.rtcscls-1-s_r_12_rId_a4 { font-weight: 700; }.rtcscls-1-s_r_15_rId_a5 { font-size: 18px; }.rtcscls-1-s_r_18_rId_a6 { font-size: 18px; }.rtcscls-1-s_r_2 { font-size: 18px; }.rtcscls-1-s_r_20_rId_a7 { font-size: 18px; }.rtcscls-1-s_r_23_rId_a8 { font-size: 18px; }.rtcscls-1-s_r_25_rId_a9 { font-size: 18px; }.rtcscls-1-s_r_5_rId_a { font-size: 18px; }.rtcscls-1-s_sn_11_rId_a4 { }.rtcscls-1-s_sn_13_rId_a5 { }.rtcscls-1-s_sn_16_rId_a6 { }.rtcscls-1-s_sn_19_rId_a7 { }.rtcscls-1-s_sn_21_rId_a8 { }.rtcscls-1-s_sn_24_rId_a9 { }.rtcscls-1-s_sn_3_rId_a { }.rtcscls-1-s_sn_6_rId_a0 { }.rtcscls-1-s_sn_7_rId_a1 { }.rtcscls-1-s_sn_9_rId_a3 { }.rtcscls-1-s_tbl_8_rId_a1 { }应该,存储芯片,实际,命名,单位